A Novel Monolithic Micropower Amplifier Using a SiGe n-MODFET Device
نویسندگان
چکیده
A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe HMODFET (Hetero-junction Modulation Doped FET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500μW). The amplifier is fabricated and measured data of the power-gain versus operating power are presented here for the first time.
منابع مشابه
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